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document number: 94507 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 01-mar-10 1 "half bridge" igbt mtp (ultrafast npt igbt), 80 a 40mt120uhapbf, 40mt120uhtapbf vishay high power products features ? ultrafast non punch through (npt) technology ?positive v ce(on) temperature coefficient ? 10 s short circuit capability ? square rbsoa ?hexfred ? antiparallel diodes with ultrasoft reverse recovery and low v f ?al 2 o 3 dbc ? optional smd thermistor (ntc) ? very low stray inductance desi gn for high speed operation ? ul approved file e78996 ? speed 8 khz to 60 khz ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level benefits ? optimized for welding, ups and smps applications ? rugged with ultrafast performance ? benchmark efficiency above 20 khz ? outstanding zvs and hard switching operation ? low emi, requires less snubbing ? excellent current sharing in parallel operation ? direct mounting to heatsink ? pcb solderable terminals ? very low junction to case thermal resistance product summary v ces 1200 v v ce(on) typical at v ge = 15 v 3.36 v i c at t c = 25 c 80 a mtp absolute maximum ratings parameter symbol test conditions max. units collector to emitte r breakdown voltage v ces 1200 v continuous coll ector current i c t c = 25 c 80 a t c = 104 c 40 pulsed collector current i cm 160 clamped inductive load current i lm 160 diode continuous forward current i f t c = 105 c 21 diode maximum forward current i fm 160 gate to emitter voltage v ge 20 v rms isolation voltage v isol any terminal to case, t = 1 min 2500 maximum power dissipation (only igbt) p d t c = 25 c 463 w t c = 100 c 185 * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94507 2 revision: 01-mar-10 40mt120uhapbf, 40mt120uhtapbf vishay high power products "half bridge" igbt mtp (ultrafast npt igbt), 80 a electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units collector to emitter breakdown voltage v (br)ces v ge = 0 v, i c = 250 a 1200 - - v temperature coefficient of breakdown voltage v (br)ces / t j v ge = 0 v, i c = 3 ma (25 c to 125 c) - + 1.1 - v/c collector to emitter saturation voltage v ce(on) v ge = 15 v, i c = 40 a - 3.36 3.59 v v ge = 15 v, i c = 80 a - 4.53 4.91 v ge = 15 v, i c = 40 a, t j = 150 c - 3.88 4.10 v ge = 15 v, i c = 80 a, t j = 150 c - 5.35 5.68 gate threshold voltage v ge(th) v ce = v ge , i c = 500 a 4 - 6 temperature coefficient of threshold voltage v ge(th) / t j v ce = v ge , i c = 1 ma (25 c to 125 c) - - 12 - mv/c transconductance g fe v ce = 50 v, i c = 40 a, pw = 80 s - 35 - s zero gate voltage collector current i ces v ge = 0 v, v ce = 1200 v, t j = 25 c - - 250 a v ge = 0 v, v ce = 1200 v, t j = 125 c - 0.4 1.0 ma v ge = 0 v, v ce = 1200 v, t j = 150 c - 0.2 10 gate to emitter leakage current i ges v ge = 20 v - - 250 na switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units total gate charge (turn-on) q g i c = 40 a v cc = 600 v v ge = 15 v - 399 599 nc gate to emitter charge (turn-on) q ge -4365 gate to collector charge (turn-on) q gc - 187 281 turn-on switching loss e on v cc = 600 v, i c = 40 a, v ge = 15 v, r g = 5 , l = 200 h, t j = 25 c, energy losses include tail and diode reverse recovery - 1.14 1.71 mj turn-off switching loss e off - 1.35 2.02 total switching loss e tot - 2.49 3.73 turn-on switching loss e on v cc = 600 v, i c = 40 a, v ge = 15 v, r g = 5 , l = 200 h, t j = 125 c, energy losses include tail and diode reverse recovery - 1.60 2.40 turn-off switching loss e off - 1.62 2.43 total switching loss e tot - 3.22 4.82 input capacitance c ies v ge = 0 v v cc = 30 v f = 1.0 mhz - 5521 8282 pf output capacitance c oes - 380 570 reverse transfer capacitance c res - 171 257 reverse bias safe operating area rbsoa t j = 150 c, i c = 160 a v cc = 1000 v, v p = 1200 v r g = 5 , v ge = + 15 v to 0 v fullsquare short circuit safe operating area scsoa t j = 150 c, v cc = 900 v, v p = 1200 v r g = 5 , v ge = + 15 v to 0 v 10 - - s
document number: 94507 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 01-mar-10 3 40mt120uhapbf, 40mt120uhtapbf "half bridge" igbt mtp (ultrafast npt igbt), 80 a vishay high power products notes (1) t 0 , t 1 are thermistors temperatures (2) , temperature in kelvin diode specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units diode forward voltage drop v fm i c = 40 a - 2.98 3.38 v i c = 80 a - 3.90 4.41 i c = 40 a, t j = 125 c - 3.08 3.39 i c = 80 a, t j = 125 c - 4.29 4.72 i c = 40 a, t j = 150 c - 3.12 3.42 reverse recovery energy of the diode e rec v ge = 15 v, r g = 5 , l = 200 h v cc = 600 v, i c = 40 a t j = 125 c - 574 861 j diode reverse recovery time t rr - 120 180 ns peak reverse recovery current i rr -4365a thermistor specifications (40mt120uhtapbf only) parameter symbol test conditions min. typ. max. units resistance r 0 (1) t 0 = 25 c - 30 - k sensitivity index of the thermistor material (1)(2) t 0 = 25 c t 1 = 85 c - 4000 - k r 0 r 1 ------ - 1 t 0 ------ 1 t 1 ------ ? ?? ?? exp = thermal and mechanical specifications parameter symbol test conditions min. typ. max. units operating junction temperature range t j - 40 - 150 c storage temperature range t stg - 40 - 125 junction to case igbt r thjc - - 0.29 c/w diode - - 0.61 case to sink per module r thcs heatsink compound thermal conductivity = 1 w/mk - 0.06 - clearance (1) external shortest distance in air between 2 terminals 5.5 - - mm creepage (2) shortest distance along external surface of the insulating material between 2 terminals 8- - mounting torque to heatsink a mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. lubricated threads. 3 10 % nm weight 66 g
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94507 4 revision: 01-mar-10 40mt120uhapbf, 40mt120uhtapbf vishay high power products "half bridge" igbt mtp (ultrafast npt igbt), 80 a fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25 c; t j 150 c fig. 4 - reverse bias soa t j = 150 c; v ge = 15 v fig. 5 - typical igbt output characteristics t j = - 40 c; t p = 80 s fig. 6 - typical igbt output characteristics t j = 25 c; t p = 80 s 0 20406080100120140160 t c (c) 0 20 40 60 80 100 i c ( a ) 0 20406080100120140160 t c (c) 0 100 200 300 400 500 600 p d ( w ) 1 10 100 1000 10000 v ce (v) 0.01 0.1 1 10 100 1000 i c ( a ) 10 s 100 s 10ms dc 10 100 1000 10 000 v ce (v) 1 10 100 1000 i c ( a ) 0246810 v ce (v) 0 20 40 60 80 100 120 140 160 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0246810 v ce (v) 0 20 40 60 80 100 120 140 160 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v
document number: 94507 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 01-mar-10 5 40mt120uhapbf, 40mt120uhtapbf "half bridge" igbt mtp (ultrafast npt igbt), 80 a vishay high power products fig. 7 - typical igbt output characteristics t j = 125 c; t p = 80 s fig. 8 - typical diode forward characteristics t p = 80 s fig. 9 - typical v ce vs. v ge t j = - 40 c fig. 10 - typical v ce vs. v ge t j = 25 c fig. 11 - typical v ce vs. v ge t j = 125 c fig. 12 - typical transfer characteristics v ce = 50 v; t p = 10 s 0246810 v ce (v) 0 20 40 60 80 100 120 140 160 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0.0 1.0 2.0 3.0 4.0 5.0 v f (v) 0 20 40 60 80 100 120 i f ( a ) -40c 25c 125c 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 80a i ce = 40a i ce = 20a 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 80a i ce = 40a i ce = 20a 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 80a i ce = 40a i ce = 20a 0 5 10 15 20 v ge (v) 0 50 100 150 200 250 300 350 i c e ( a ) t j = 25c t j = 125c
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94507 6 revision: 01-mar-10 40mt120uhapbf, 40mt120uhtapbf vishay high power products "half bridge" igbt mtp (ultrafast npt igbt), 80 a fig. 13 - typical energy loss vs. i c t j = 125 c; l = 250 h; v ce = 400 v r g = 5 ; v ge = 15 v fig. 14 - typical switching time vs. i c t j = 125 c; l = 250 h; v ce = 400 v r g = 5 ; v ge = 15 v fig. 15 - typical energy loss vs. r g t j = 150 c; l = 250 h; v ce = 600 v i ce = 40 a; v ge = 15 v fig. 16 - typical switching time vs. r g t j = 150 c; l = 250 h; v ce = 600 v i ce = 40 a; v ge = 15 v fig. 17 - typical diode i rr vs. i f t j = 125 c fig. 18 - typical diode i rr vs. r g t j = 125 c; i f = 40 a 0 20406080100 i c (a) 0 600 1200 1800 2400 3000 3600 4200 4800 e n e r g y ( j ) e off e on 0 20 40 60 80 100 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 10 20 30 40 50 60 r g ( ) 1000 2000 3000 4000 5000 6000 e n e r g y ( j ) e on e off 0 10 20 30 40 50 60 r g ( ) 10 100 1000 10 000 s w i c h i n g t i m e ( n s ) t r td off t f td on 10 20 30 40 50 60 70 i f (a) 0 10 20 30 40 50 i rr ( a ) r g = 5.0 r g = 10 r g = 30 r g = 50 0 10 20 30 40 50 60 r g ( ) 10 20 30 40 50 i rr ( a )
document number: 94507 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 01-mar-10 7 40mt120uhapbf, 40mt120uhtapbf "half bridge" igbt mtp (ultrafast npt igbt), 80 a vishay high power products fig. 19 - typical diode i rr vs. di f /dt v cc = 600 v; v ge = 15 v; i ce = 40 a; t j = 125 c fig. 20 - typical diode q rr vs. di f /dt v cc = 600 v; v ge = 15 v; t j = 125 c fig. 21 - typical capacitance vs. v ce v ge = 0 v; f = 1 mhz fig. 22 - typical gate charge vs. v ge i ce = 5.0 a; l = 600 h fig. 23 - maximum transient thermal impedance, junction to case (igbt) 0 200 400 600 800 1000 di f /dt (a/s) 10 15 20 25 30 35 40 45 50 i rr ( a ) 0 200 400 600 800 1000 1200 di f /dt (a/s) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 q rr ( c ) 5.0 30 10 50 60a 40a 20a 0 20 40 60 80 100 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 100 200 300 400 500 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e ( v ) 600v 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 t 1 , rectangular pulse duration (sec) 1e-005 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.01 0.02 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.123 1.1977 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci= i/ri ci= i/ri 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 t 1 , rectangular pulse duration (sec) 1e-005 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.01 0.02 0.05 single pulse ( thermal response) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.043 0.001214 0.105 0.044929 0.123 1.1977 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci= i/ri ci= i/ri
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94507 8 revision: 01-mar-10 40mt120uhapbf, 40mt120uhtapbf vishay high power products "half bridge" igbt mtp (ultrafast npt igbt), 80 a fig. 24 - maximum transient thermal impedance, junction to case (diode) fig. 25 - electrical diagram 1e-006 1e-005 0.0001 0.001 0.01 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.01 0.02 0.05 single pulse ( thermal response) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.024 0.00008 0.549 0.000098 j j 1 1 2 2 r 1 r 1 r 2 r 2 c ci i/ri ci= i/ri 3, 4 11 12 5, 6 9 10 7, 8 thermistor option only for 40mt120uhtapbf t 2 r 1
document number: 94507 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 01-mar-10 9 40mt120uhapbf, 40mt120uhtapbf "half bridge" igbt mtp (ultrafast npt igbt), 80 a vishay high power products fig. ct.1 - gate ch arge circuit (turn-off) fig. ct.2 - rbsoa circuit fig. ct.3 - s.c. soa circuit fig. ct.4 - switching loss circuit 1 k v cc d.u.t. 0 l + - l r g 80 v d.u.t. 1000 v + - d c driver d.u.t. 900 v + - l r g v cc diode clamp/ d.u.t. d.u.t./ driver - 5 v - + + -
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94507 10 revision: 01-mar-10 40mt120uhapbf, 40mt120uhtapbf vishay high power products "half bridge" igbt mtp (ultrafast npt igbt), 80 a ordering information table circuit configuration 1 - current rating (40 = 40 a) 2 - essential part number 3 - voltage code (120 = 1200 v) 4 - speed/type (u = ultrafast igbt) 5 - circuit configuration (h = half bridge) 6 - special option: 7 - a = al 2 o 3 dbc substrate 8 - pbf = lead (pb)-free none = no special option t = thermistor device code 5 13 24 678 40 mt 120 u h t a pbf links to related documents dimensions www.vishay.com/doc?95175
document number: 95175 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 18-mar-08 1 mtp outline dimensions vishay semiconductors dimensions in millimeters note ? unused terminals are not assembled in the package ? 1.1 ? 5 3.5 33 31.8 12 0.5 4 20.5 2.5 87 6 543 2 1 13 9 10 11 12 1.8 8.1 45 5.4 0.1 5.7 0.1 1.2 0.1 7.2 0.1 7.8 0.1 3 0.1 27.5 11.35 0.1 11.35 0.1 r2.6 (x 3) r5.8 (x 2) 8.7 0.1 6 0.1 3 0.1 8.5 0.1 39.5 0.1 44.5 48.7 63.5 0.25 1.3
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